Design and W-CDMA Characterization of a Wideband AlGaN/GaN HEMT Power Amplifier for Future 3G Multiband Base Station Applications
نویسندگان
چکیده
A single stage wideband amplifier based on an AlGaN/GaN HEMT power cell with a total gate-width of 16 mm matched to 50 Ohm has been successfully developed and characterized by use of a single-carrier W-CDMA signal. A very wide bandwidth of more than 1.7 GHz covering several mobile radio frequency bands within Land S-band with peak output power levels up to 44 dBm has been demonstrated with meeting 3GPP ACLR requirement in the complete measured frequency range. The maximum measured output power level was 45.8 dBm translating into a power density of 2.4 W/mm, which is superior compared to that of established technologies like LDMOS. The presented power amplifier shows the impressive potential of AlGaN/GaN HEMT technology regarding output power and bandwidth, supporting the development of future multiband/ multistandard capable base stations. Keywordsmultiband/multistandard, AlGaN/GaN HEMT technology, wideband amplifier, W-CDMA test signal
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